We have reported the fabrication of novel quasi one-dimensional nitrogen doped graphene nanobelts (quasi 1D NGNBs) by a simple and cost-effective method. The growth of such a unique structure was achieved by treating graphene with ammonia under hydrothermal conditions, followed by low temperature treatment with nitrogen liquid. After the removal of ice template by lyophilization, the synthesized quasi 1D NGNBs were obtained. The synthesized quasi 1D NGNBs were examined by SEM, TEM, Raman, XPS, BET and TGA. The prepared quasi 1D NGNBs exhibit higher surface area (718 m² g⁻¹), good structural stability, high electrical conductivity, less internal resistance (0.5 Ω), and many active sites than reduced graphene oxide. The electrochemical analysis reveals that quasi 1D NGNBs have a specific capacitance of 286 F g⁻¹ at current density of 1.0 A g⁻¹ that is greater as compared to 112 F g⁻¹ for rGO and also exhibit enhanced cyclic stability with excellent retention above 79.03% after 20,000 times. So, this indicates that quasi 1D NGNBs possess high capacitance due to distinct folded structure of π-π stacking and can be used for high performance supercapacitors.

我们已经报道了通过简单且具有成本效益的方法制造新型准一维氮掺杂石墨烯纳米带（准一维 NGNB）。这种独特结构的生长是通过在水热条件下用氨处理石墨烯，然后用氮液低温处理来实现的。通过冻干去除冰模板后，获得合成的准一维NGNB。通过 SEM、TEM、Raman、XPS、BET 和 TGA 检查合成的准 1D NGNB。制备的准一维 NGNB 具有更高的表面积（718 m ² g ^-1)、良好的结构稳定性、高导电性、较小的内阻（0.5 Ω）和比还原氧化石墨烯多的活性位点。电化学分析表明，准一维 NGNB在 1.0 A g ^{-1的电流密度下具有 286 F g -1的比电容，与 rGO 的 112 F g -1}相比更大，并且还表现出增强的循环稳定性和出色的保持力。 20,000 次后为 79.03%。因此，这表明准一维 NGNB 由于 π-π 堆叠的独特折叠结构而具有高电容，可用于高性能超级电容器。