In this paper, we analyze the impact of the leakage current of an AND-type synapse array on a spiking neural network (SNN). In order to evaluate the firing rate modulation affected by the leakage current of a synapse array, the electrical characteristics of a fabricated dual-gate synapse are measured and modeled. A SPICE circuit simulation shows a severe change in the firing rate in the SNN, and a system-level simulation with MNIST datasets exhibits frequency-dependent performance degradation due to the leakage current. Compared to a case with negligible leakage current, a 6.98% accuracy loss at 50 kHz of input frequency, which is the firing rate of conventional CMOS neurons.

在本文中，我们分析了 AND 型突触阵列的漏电流对尖峰神经网络 (SNN) 的影响。为了评估受突触阵列泄漏电流影响的放电率调制，测量并建模了制造的双门突触的电特性。SPICE 电路仿真显示 SNN 中的触发率发生了严重变化，而使用 MNIST 数据集的系统级仿真显示出由于泄漏电流导致的频率相关性能下降。与漏电流可忽略不计的情况相比，在 50 kHz 的输入频率（这是传统 CMOS 神经元的放电率）下，精度损失为 6.98%。