In this work, CeO_x/In₂O₃ containing mass ratios of 0.1, 0.2 and 0.3 CeO_x were prepared via a simple wet impregnation method and their photoactivity was evaluated for CO₂ photoreduction with CH₄ or H₂O. HRTEM verified the formation of an oxide-oxide interface in CeO_x/In₂O₃. XPS analysis revealed the presence of trivalent Ce³⁺ as the predominant species in CeO_x/In₂O₃ that were formed due to the stabilization of Ce³⁺ states by In₂O₃. The presence of a higher content of Ce³⁺ reflected a strong interfacial contact between CeO_x and In₂O_3. The optimized CeO_x/In₂O₃ showed 4–7 times enhancement as compared to the unmodified In₂O₃ for CO₂ photoreduction with CH₄ or H₂O reactions. The selectivity of CO and H₂ were dependent on the reductant used. The selectivity of CO and H₂ for CO₂ photoreduction with CH₄ remained at 33 % and 66 % after CeO_x addition. Contrarily, the selectivity of H₂ showed a gradual drop from 61 % to 18 % with an increase in CeO_x loading when H₂O was used as reductant. The improved activity of CeO_x/In₂O₃ was because of (i) promoted charge transfer and separation due to strong interfacial contact and Type II band alignment, (ii) enhanced light absorption, and (iii) increased basic sites for CO₂ adsorption.

在这项工作中，通过简单的湿法浸渍法制备了质量比为 0.1、0.2 和 0.3 的 CeO _x /In ₂ O _{3的 CeO x} /In 2 O 3 ，并用 CH ₄或 H _{2 O 评估了它们对 CO 2}光还原的光活性。HRTEM 验证了在CeO _x /In ₂ O ₃中形成氧化物-氧化物界面。XPS 分析表明存在三价 Ce ³⁺作为 CeO _x /In ₂ O ₃中的主要物质，这是由于In _{2稳定 Ce} ³⁺状态而形成的。氧₃ . 较高含量的 Ce ^{3+的存在反映了 CeO} _x和 In ₂ O ₃之间的强界面接触。与未改性的 In ₂ O 3 相比，优化的 CeO x /In 2 O ₃对CO_的增强_效果提高_了4-7倍₂光还原与 CH ₄或 H ₂ O 反应。CO和H ₂的选择性取决于所使用的还原剂。CO 和 H ₂对CH ₄光还原CO _{2的选择性在添加 CeO x}后保持在 33% 和 66% 。相反，当H ₂ O用作还原剂时，随着CeO _x负载量的增加，H ₂的选择性从61%逐渐下降到18% 。_{CeO x} /In ₂ O ₃的活性提高是因为 (i) 由于强界面接触和 II 型能带排列，促进了电荷转移和分离，(ii) 增强了光吸收，以及 (iii) 增加了 CO ₂的碱性位点吸附。