Abstract

The effect of doping with nickel on the radiation stability of silicon solar cells has been studied within a γ-radiation dose range of 10⁵–10⁸ rad. It has been shown that the diffusion doping of silicon with impurity nickel atoms increases the radiation stability of the parameters of silicon solar cells. It is implied that a reason of increase in the radiation stability of such solar cells is the existence of clusters, which are composed of impurity nickel atoms and serve as sinks for radiation defects.

中文翻译：

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镍掺杂太阳能电池的辐射稳定性

摘要

^{在 10 5} –10 ⁸ rad的 γ 辐射剂量范围内，研究了镍掺杂对硅太阳能电池辐射稳定性的影响。已经表明，用杂质镍原子对硅进行扩散掺杂提高了硅太阳能电池参数的辐射稳定性。暗示这种太阳能电池的辐射稳定性增加的一个原因是存在由杂质镍原子组成的团簇，作为辐射缺陷的汇点。