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Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures
Solid-State Electronics ( IF 1.7 ) Pub Date : 2022-06-27 , DOI: 10.1016/j.sse.2022.108405
Michael E. Levinshtein , Alexander A. Lebedev , Vitali V. Kozlovski , Dmitriy A. Malevsky , Roman A. Kuzmin , Gagik A. Oganesyan

The effect of the electron irradiation at high temperatures Ti (300 and 500 °C) and of the subsequent annealing on the current–voltage characteristics and DLTS spectra of high-voltage integrated 4H-SiC Schottky diodes is compared for the first time. The optimal annealing modes of the structures irradiated with 0.9 MeV electrons are determined. It is shown that the irradiation with a relatively low fluence Φ = 1016 cm−2 at 300 °C leads to an increase in the base resistance Rb by approximately an order of magnitude, and the initial value of Rb can be completely restored by a single annealing in a nitrogen atmosphere at a temperature of 250 °C for 60 min. At the same time, however, annealing affects only slightly the DLTS spectra measured after the irradiation. With increasingΦ, the longer annealing is required to fully restore the Rb. However, with the fluence increasing to Φ ≥ 5 × 1016 cm−2, the effect of a “reverse annealing” was observed in SiC for the first time: the resistance of the base grows as a result of the annealing. Irradiation at temperature of 500 °C leads at Φ ≥ 5 × 1016 cm−2 to an even more pronounced effect of reverse annealing. It is demonstrated that the presence of DLTS-detected acceptor centers arising as a result of the “hot” irradiation in the upper half of the band gap can explain neither the change in the current–voltage characteristics nor the results of annealing.



中文翻译:

高温电子辐照高压SiC肖特基二极管的电流电压特性和DLTS光谱

首次比较了高温Ti 300 和 500 ℃)电子辐照和后续退火对高压集成 4H-SiC 肖特基二极管的电流电压特性和 DLTS 光谱的影响。确定了用 0.9 MeV 电子辐照的结构的最佳退火模式。结果表明,在 300 °C 下,在Φ  = 10 16 cm -2下进行的辐照导致基极电阻R b增加了大约一个数量级,并且R b的初始值可以通过在 250 °C 温度下在氮气气氛中单次退火 60 分钟来完全恢复。然而,与此同时,退火对辐照后测量的 DLTS 光谱的影响很小。随着Φ的增加,需要更长的退火时间才能完全恢复R b。然而,随着能量密度增加到Φ  ≥ 5 × 10 16 cm -2,首次在 SiC 中观察到“反向退火”效应:基极的电阻因退火而增加。500 °C 温度下的辐照导致Φ  ≥ 5 × 10 16 cm -2反向退火的效果更为显着。结果表明,由于带隙上半部分的“热”辐照而产生的 DLTS 检测受体中心的存在既不能解释电流-电压特性的变化,也不能解释退火的结果。

更新日期:2022-06-27
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