In this study, using three isomers (1,1,1,3,3,3-hexafluoropropane (HFC-236fa), 1,1,1,2,3,3-hexafluoropropane (HFC-236ea), 1,1,2,2,3,3-hexafluoropropane (HFC-236ca)) having the same chemical composition of C₃H₂F₆, effects of chemical branch structure of three C₃H₂F₆ isomers on the plasma characteristics and etch characteristics of high aspect ratio ACL patterned SiO₂ were investigated. During the etching of SiO₂ and amorphous carbon layer (ACL) using the three isomers mixed with oxygen, different etch characteristics and plasma characteristics were observed. In the plasmas, more CF₂ and H but, less F were related to the formation of a fluorocarbon polymer layer on the surface, while lower high mass ion species such as C₃HF₄⁺ and, C₃H₂F₅⁺ were related to the ion bombardment in the order of HFC-236fa, HFC-236ea, and HFC-236ca consequently leading to a lower SiO₂ etch rate. Therefore, when C₃H₂F₆ was used, even with the same chemical composition, the chemical branch structure of the compound affected the plasma properties and etch characteristics significantly depending on chemical branches in the compound. We believe that, for other hydrofluorocarbon compounds mixed with a critical oxygen flow rate, plasma properties and SiO₂ etch characteristics can be estimated through properties of chemical branches attached in these compounds.

在本研究中，使用三种异构体（1,1,1,3,3,3-六氟丙烷 (HFC-236fa)、1,1,1,2,3,3-六氟丙烷 (HFC-236ea)、1,1、 2,2,3,3-六氟丙烷（HFC-236ca））具有与C 3 H 2 F 6 相同的化学成分_，三种_C 3 _{H 2} F ₆异构_体的化学分支结构对等离子体特性和蚀刻特性的影响研究了高纵横比ACL图案化SiO ₂。在使用与氧混合的三种异构体蚀刻 SiO ₂和无定形碳层 (ACL) 期间，观察到不同的蚀刻特性和等离子体特性。在等离子体中，更多的 CF ₂和H，但是，较少的F与表面上形成氟碳聚合物层有关，而较低的高质量离子种类如C ₃ HF ₄ ⁺和C ₃ H ₂ F ₅ ⁺与离子轰击有关HFC-236fa、HFC-236ea和HFC-236ca的顺序因此导致较低的SiO ₂蚀刻速率。因此，当 C ₃ H ₂ F ₆即使使用相同的化学成分，化合物的化学分支结构也会显着影响等离子体特性和蚀刻特性，具体取决于化合物中的化学分支。我们相信，对于其他与临界氧流速混合的氢氟碳化合物，等离子体特性和SiO ₂蚀刻特性可以通过这些化合物中附着的化学分支的特性来估计。