An extraction framework that can precisely reflect the metal-semiconductor contact behavior is developed for self-aligned top-gated oxide semiconductor field-effect transistors (SA-TG OS FETs). In contrast to the conventional transfer length method, where the extraction is performed at a constant drain voltage condition, an improved constant current scheme, resilient to bias-dependent series resistance, is employed to enhance the extraction accuracy. This technique enables one to unveil the underlying device physics at the metal-OS interface under top-gated operation. Furthermore, the resistance of contact and extension regions can be accurately differentiated by exploiting the extraction results from the three-terminal FETs and two-terminal resistors using the present framework. Moreover, the significant role of the specific contact resistivity at the metal-OS interface is highlighted as the dominating factor that detrimentally affects the electrical performance of OS FETs.

为自对准顶栅氧化物半导体场效应晶体管（SA-TG OS FET）开发了一种可以精确反映金属-半导体接触行为的提取框架。与在恒定漏极电压条件下执行提取的传统传输长度方法相比，采用改进的恒定电流方案，对依赖于偏置的串联电阻具有弹性，以提高提取精度。这种技术使人们能够在顶栅操作下揭示金属操作系统接口的底层设备物理特性。此外，通过利用本框架的三端 FET 和两端电阻器的提取结果，可以准确区分接触区和延伸区的电阻。而且，