Recently, electrically conducting heterointerfaces between dissimilar band insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport and fundamental aspects of conduction have been thoroughly explored. Perhaps surprisingly, similar studies on conceptually much simpler conducting homointerfaces, such as domain walls, are not nearly so well developed. Addressing this disparity, magnetoresistance is herein reported in approximately conical 180° charged domain walls, in partially switched ferroelectric thin-film single-crystal lithium niobate. This system is ideal for such measurements: first, the conductivity difference between domains and domain walls is unusually large (a factor of 10¹³) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channeled along the walls; second, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes, then the test geometry mirrors that of a Corbino disk: a textbook arrangement for geometric magnetoresistance measurement. Data imply carriers with extremely high room-temperature Hall mobilities of up to ≈3700 cm² V⁻¹ s⁻¹. This is an unparalleled value for oxide interfaces (and for bulk oxides) comparable to mobilities in other systems seen at cryogenic, rather than at room, temperature.

中文翻译：

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室温下铁电畴壁科尔比诺锥中的超高载流子迁移率

最近，异能带绝缘体（如铝酸镧和钛酸锶）之间的导电异质界面引起了广泛的研究兴趣。电荷传输和传导的基本方面已得到彻底探索。也许令人惊讶的是，关于概念上更简单的导电同质界面（例如畴壁）的类似研究并没有得到很好的发展。为了解决这种差异，本文在部分转换的铁电薄膜单晶铌酸锂中，在大约圆锥形 180° 带电畴壁中报告了磁阻。^{该系统非常适合此类测量：首先，畴和畴壁之间的电导率差异异常大（10 13}倍）) 因此，驱动通过薄膜的电流，在平面顶部和底部电极之间，绝大多数都沿着壁引导；其次，当在畴壁的顶部和底部进行电接触并沿它们的锥轴施加磁场时，测试几何形状将反映出 Corbino 圆盘的几何形状：几何磁阻测量的教科书布置。^{数据表明载流子具有高达 ≈3700 cm 2} V ^-1 s ^-1的极高室温霍尔迁移率。这是氧化物界面（和块状氧化物）无与伦比的值，可与在低温而非室温下看到的其他系统中的迁移率相媲美。