The $E3$ transition in irradiated GaAs observed in deep level transient spectroscopy (DLTS) was recently discovered in Laplace-DLTS to encompass three distinct components. The component designated $E3c$ was found to be metastable, reversibly bleached under minority carrier (hole) injection, with an introduction rate dependent upon Si doping density. It is shown through first-principles modeling that the $E3c$ must be the intimate Si-vacancy pair, best described as a Si sitting in a divacancy ${\mathrm{Si}}_{vv}$. The bleached metastable state is enabled by a doubly site-shifting mechanism: Upon recharging, the defect undergoes a second site shift rather returning to its original $E3c$-active configuration via reversing the first site shift. Identification of this defect offers insights into the short-time annealing kinetics in irradiated GaAs.

中文翻译：

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GaAs中亚稳态注入-漂白E3c中心的理论

这$乙3$最近在 Laplace-DLTS 中发现，在深能级瞬态光谱 (DLTS) 中观察到的辐照 GaAs 的转变包含三个不同的成分。指定的组件$乙3C$被发现是亚稳态的，在少数载流子（空穴）注入下可逆地漂白，其引入速率取决于Si掺杂密度。通过第一性原理建模表明$乙3C$必须是亲密的 Si-空位对，最好描述为坐在空位中的 Si${硅}_{vv}$. 漂白的亚稳态是通过双重位点转移机制实现的：再充电时，缺陷会经历第二次位点转移，而不是恢复到原来的位置$乙3C$-通过反转第一个站点转移来进行主动配置。这种缺陷的识别提供了对辐照 GaAs 短时间退火动力学的深入了解。