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Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE)
Journal of Alloys and Compounds ( IF 6.2 ) Pub Date : 2022-06-22 , DOI: 10.1016/j.jallcom.2022.165994
M. Camacho-Reynoso , C.A. Hernández-Gutiérrez , C.M. Yee-Rendón , C. Rivera-Rodríguez , D. Bahena-Uribe , S. Gallardo-Hernández , Yuriy Kudriavtsev , M. López-López , Y.L. Casallas-Moreno

We report the growth of InxGa1−xN/GaN quantum wells (QWs) in metastable-cubic phase through two well-controlled methods, Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (conventional MBE) on GaAs substrate. An increment of In mole fraction in the c-InxGa1−xN QWs was found with the decrease of growth temperature for both methods. The MEE implemented in this work, which consists of alternating the atomic flux periods at temperatures, approximately 100 C lower than in conventional MBE, successfully addresses the cubic InxGa1−xN/GaN QW growth challenge. The QWs grown by this method present lower In segregation than those grown using conventional MBE. Excitonic transitions in the visible spectrum range from violet (414 nm) to green (544 nm) wavelengths were obtained in the QWs, by varying In content for both methods. These excitonic emissions are in good agreement with the theoretical calculations performed. Likewise, we identified the chemical bonds present in each c-InxGa1−xN QW, which corresponded to In–N and Ga–N, and their binding energies through In 3d, Ga 3d, and N 1s core levels by x-ray photoelectron spectroscopy (XPS). Therefore, this work provides an important understanding of In segregation, In incorporation mechanism, and radiative excitonic transitions of cubic QWs, that can be considered in complex heterostructures for novel optoelectronic applications.



中文翻译:

通过迁移增强外延 (MEE) 和常规分子束外延 (MBE) 生长的立方 InxGa1−xN/GaN 量子阱

我们通过两种控制良好的方法,迁移增强外延 (MEE) 和常规分子束外延 (常规 MBE) 在 GaAs 衬底上报告了 In x Ga 1−x N/GaN 量子阱 (QW) 在亚稳态立方相中的生长。两种方法都发现随着生长温度的降低, c-In x Ga 1-x N QWs中的 In 摩尔分数增加。在这项工作中实施的 MEE,包括在温度下交替原子通量周期, 比传统 MBE 低约 100 ∘ C,成功地解决了立方 In x Ga 1−xN/GaN QW 增长挑战。与使用传统 MBE 生长的 QW 相比,通过这种方法生长的 QW 呈现出更低的 In 偏析。通过改变两种方法的 In 含量,在 QW 中获得了可见光谱范围内从紫色 (414 nm) 到绿色 (544 nm) 波长的激子跃迁。这些激子发射与所进行的理论计算非常吻合。同样,我们确定了每个 c-In x Ga 1−x中存在的化学键N QW,对应于 In-N 和 Ga-N,以及通过 X 射线光电子能谱 (XPS) 分析的 In 3d、Ga 3d 和 N 1s 核心能级的结合能。因此,这项工作提供了对立方 QW 的 In 偏析、In 掺入机制和辐射激子跃迁的重要理解,可以在复杂的异质结构中考虑用于新型光电应用。

更新日期:2022-06-22
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