This paper presents the design and analysis of linearity improved low noise amplifier (LNA) for X-band applications such as wireless, satellite, and radar communication. In such applications for efficient communication, the LNA should have good linearity in order to handle strong interferers at wideband receiver operation. Hence, achieving better linearity is inevitable for high frequency applications, but it has a trade-off between circuit power, noise, and bandwidth. For linearity improvement of this high frequency band applications, a low power, low noise, modified Common Gate-Common Source LNA with cross-coupled LC circuit in cascode stage is proposed in this work. The LNA is designed and implemented in UMC 180 nm complementary metal–oxide–semiconductor process technology. From the post-layout simulations, the observed third-order input intercept point is 13.09 dBm at the center frequency of 10 GHz. The proposed LNA provides a maximum gain of 18.07 dB and a minimum Noise Figure of 2.88 dB with 5.3 mW power consumption at a supply of 1.2 V.

本文介绍了用于 X 波段应用（如无线、卫星和雷达通信）的线性改进低噪声放大器 (LNA) 的设计和分析。在此类高效通信应用中，LNA 应具有良好的线性度，以便在宽带接收器操作时处理强干扰。因此，对于高频应用来说，实现更好的线性度是不可避免的，但它需要在电路功率、噪声和带宽之间进行权衡。为了提高这种高频带应用的线性度，本文提出了一种低功耗、低噪声、改进的共栅共源 LNA，该 LNA 在共源共栅级具有交叉耦合 LC 电路。LNA 采用 UMC 180 nm 互补金属氧化物半导体工艺技术设计和实现。从布局后的模拟来看，在 10 GHz 的中心频率处，观察到的三阶输入截点为 13.09 dBm。建议的 LNA 在 1.2 V 电源下提供 18.07 dB 的最大增益和 2.88 dB 的最小噪声系数，功耗为 5.3 mW。