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Pseudocapacitive Behavior of Ce Modified CoO through a Galvanostatic Charge–Discharge Test: Distinguishing between Surface-Control and Diffusion-Control Current
The Journal of Physical Chemistry C ( IF 3.7 ) Pub Date : 2022-06-21 , DOI: 10.1021/acs.jpcc.2c02518
Lin Zhu 1, 2 , Zhen Ai 2 , Baoli Wang 1 , Siyue Zhang 1 , Ruyi Zou 1, 3 , Yuhao Huang 1 , Wei Sun 1
Affiliation  

This paper presents an attempt on deconvoluting diffusion-control current (id) and surface-control current (is) from total current in a galvanostatic charge–discharge (GCD) test. Using this strategy, the pseudocapacitive behavior of nanosized Ce-CoO dispersed on graphene support was studied in detail. The results show that id is greatly affected by operating potential and occupies some proportion of the total pseudocapacitive current. The main functions of Ce in the composite material include promoting the proportion of is or inhibiting id and finally stimulating a specific capacitance (Cs) value increased from 192 to 726 F g–1. The Bode curve in the low-frequency region also proves that Ce can promote the performance of pseudocapacitance.

中文翻译:

通过恒电流充放电测试 Ce 改性 CoO 的赝电容行为:区分表面控制电流和扩散控制电流

本文提出了在恒电流充放电 (GCD) 测试中从总电流中解卷积扩散控制电流 ( i d ) 和表面控制电流 ( i s ) 的尝试。使用这种策略,详细研究了分散在石墨烯载体上的纳米级 Ce-CoO 的赝电容行为。结果表明,i d受工作电位影响较大,占总赝电容电流的一定比例。Ce 在复合材料中的主要作用包括提高i s的比例或抑制i d并最终激发比电容 ( C s) 值从 192 增加到 726 F g –1。低频区的波德曲线也证明了Ce可以促进赝电容的性能。
更新日期:2022-06-21
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