Topological crystalline insulator (TCI) SnTe is a potential material for quantum electronic devices because of its attractive inherent sensitivity of band topology and highly mobile characteristic of Dirac fermions. The proximity effect at the interface of SnTe film can affect the topological surface transport and may result in novel quantum magneto-electric effects. Here, we study the magnetoelectrical transport properties of SnTe thin films grown on ferrimagnetic insulators Eu₃Fe₅O₁₂ (110) (EuIG (110)) and Y₃Fe₅O₁₂ (111) (YIG (111)) single-crystal underlayers by molecular beam epitaxy. Linear magnetic resistance (LMR) is observed in SnTe/EuIG heterostructures in the low field range, which is different from the weak antilocalization (WAL) characteristic of SnTe/YIG heterostructures. Especially, the double carrier characteristic with the coexistence of holes and electrons in SnTe/EuIG heterostructure is quite different from the holes as main carriers in SnTe/YIG, although the SnTe layer remains the same crystal plane (100) in the two heterostructures. The LMR in SnTe/EuIG is attributed to the topological surface Dirac electrons and disordered domain distribution in the SnTe layer which is in sharp contrast to the WAL of SnTe/YIG with ordered domain distribution in the SnTe layer. The present studies of transport properties not only provide a fundamental understanding of the transport mechanism of TCI and magnetite insulator heterostructure but also display the promising application probability for tunable topological electronic devices.

拓扑晶体绝缘体 (TCI) SnTe 是一种潜在的量子电子器件材料，因为它具有吸引人的能带拓扑固有敏感性和狄拉克费米子的高移动特性。SnTe 薄膜界面的邻近效应会影响拓扑表面传输，并可能导致新的量子磁电效应。_{在这里，我们研究了生长在亚铁磁绝缘体 Eu 3} Fe ₅ O ₁₂ (110) (EuIG (110)) 和 Y ₃ Fe ₅ O ₁₂上的 SnTe 薄膜的磁电输运特性。(111) (YIG (111)) 分子束外延的单晶底层。SnTe/EuIG 异质结构在低场范围内观察到线性磁阻 (LMR)，这与 SnTe/YIG 异质结构的弱反定域 (WAL) 特性不同。特别是 SnTe/EuIG 异质结构中空穴和电子共存的双载流子特性与 SnTe/YIG 中作为主要载流子的空穴有很大不同，尽管 SnTe 层在两种异质结构中保持相同的晶面（100）。SnTe/EuIG 中的 LMR 归因于拓扑表面 Dirac 电子和 SnTe 层中的无序畴分布，这与 SnTe/YIG 的 WAL 在 SnTe 层中具有有序畴分布形成鲜明对比。