In addition to electrical, optical, and magnetic fields, mechanical forces have demonstrated a strong ability to modulate semiconductor devices. With the rapid development of piezotronics and flexotronics, force regulation has been widely used in field-effect transistors (FETs), human–machine interfaces, light-emitting diodes (LEDs), solar cells, etc. Here, a large mechanical modulation of electronic properties by nano-Newton force in semiconductor materials with a large Young's modulus-based force FET is reported. More importantly, this FET has ultralow switching energy dissipation (7 aJ per decuple current gain) and nearly zero leakage power; these values are even better than those of electronic FETs. This finding paves the way for practical applications of nanoforce modulation devices at high power efficiency.

中文翻译：

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通过 Flexotronic 效应在 Atto-Joule 能量下对二维电子器件进行机械调制

除了电场、光学和磁场之外，机械力还显示出强大的调制半导体器件的能力。随着压电电子学和柔性电子学的快速发展，力调节已广泛应用于场效应晶体管（FET）、人机界面、发光二极管（LED）、太阳能电池等领域。报告了具有基于杨氏模量的大力场效应晶体管的半导体材料中纳米牛顿力的特性。更重要的是，这款 FET 具有超低的开关能耗（每十倍电流增益为 7 aJ）和几乎为零的泄漏功率；这些值甚至优于电子 FET 的值。这一发现为纳米力调制装置在高功率效率下的实际应用铺平了道路。