Reciprocating pressure-induced phase transition (RPPT) has been proposed as a new approach to synthesize nanostructured bulk materials with clean grain boundary interfaces for structures that undergo reversible pressure-induced phase transitions. The modulation effects on grain size under different cycle numbers of RPPT for InAs were investigated and the initial single-crystal bulk, with a dimensional size of about 30 μm, was transformed into a nanostructure with an average grain size of 7 nm by the utilization of the in situ high-pressure diamond anvil cell (DAC) technique. To verify the DAC findings, compact nanostructured bulk InAs with grain sizes ranging from 2–20 nm (average = 8 nm) and large dimensions (3.2 mm × 3.2 mm × 0.5 mm) was successfully synthesized from single-crystal InAs using a large volume press (LVP). The smaller work function (3.86 eV) and larger bandgap energy (2.64 eV) of the compact nanostructured bulk InAs phase compared to those of single-crystal InAs demonstrated that the nanostructure affected the macroscopic properties of InAs. The findings confirm the feasibility of synthesizing nanostructured bulk materials via RPPT.

中文翻译：

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将砷化铟单晶挤压成超细纳米结构致密块体

往复式压力诱导相变 (RPPT) 已被提出作为一种新的方法来合成具有清洁晶界界面的纳米结构块体材料，用于经历可逆压力诱导相变的结构。研究了 InAs 在不同 RPPT 循环数下对晶粒尺寸的调制效应，并利用原地_高压金刚石砧座 (DAC) 技术。为了验证 DAC 的发现，使用大体积的单晶 InAs 成功合成了晶粒尺寸范围为 2-20 nm（平均 = 8 nm）和大尺寸（3.2 mm × 3.2 mm × 0.5 mm）的紧凑纳米结构块体 InAs按 (LVP)。与单晶 InAs 相比，致密的纳米结构体 InAs 相具有更小的功函数 (3.86 eV) 和更大的带隙能量 (2.64 eV)，这表明纳米结构影响了 InAs 的宏观性质。研究结果证实了通过RPPT合成纳米结构块体材料的可行性。