Abstract

The effects observed in the Shubnikov–de Haas oscillation regime in the HgCdTe/HgTe/HgCdTe heterostructure with a wide (20.3 nm) HgTe quantum well with an inverted band structure are discussed. In a topologically trivial 2D system, a π-shift of magnetooscillation phase is found. A thorough experimental study and theoretical analysis of the data is presented to understand the physical causes of this anomalous phase shift. The effective electron mass m_c/m₀ = (0.022 ± 0.002) obtained from the region of doubly degenerate magnetoresistance peaks is approximately half the theoretical estimates. In the region of stronger magnetic fields, for non-degenerate magnetoresistance peaks, we have m_c/m₀ = (0.034 ± 0.003), which is in good agreement with both theoretical predictions and experimental results obtained from the analysis of activation conductivity in the quantum Hall effect regime. The reasons for this discrepancy are discussed.

中文翻译：

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具有倒带光谱的 HgCdTe/HgTe/HgCdTe 异质结构中磁阻的量子振荡

摘要

讨论了在具有倒带结构的宽 (20.3 nm) HgTe 量子阱的 HgCdTe/HgTe/HgCdTe 异质结构中的 Shubnikov-de Haas 振荡机制中观察到的效应。在拓扑微不足道的二维系统中，发现了磁振荡相位的 π 位移。对数据进行了彻底的实验研究和理论分析，以了解这种异常相移的物理原因。从双重简并磁阻峰区域获得的有效电子质量m _c / m ₀ = (0.022 ± 0.002) 约为理论估计值的一半。在强磁场区域，对于非简并磁阻峰，我们有m _c / m ₀=（0.034±0.003），这与理论预测和从量子霍尔效应状态下的活化电导率分析中获得的实验结果非常吻合。讨论了造成这种差异的原因。