The tandem cell structure is the most promising solution for the next generation photovoltaic technology to overcome the single-junction Shockley–Queisser limit. The fabrication of a perovskite/c-Si monolithic tandem device has not yet been demonstrated on a c-Si bottom cell produced from an industrial production line. Here, a c-Si cell with a tunneling oxide passivating contact (TOPCon) structure produced on a production line as the bottom cell of a tandem device, and a top cell featuring solution-processed perovskite films to form the tandem device are used. The c-Si cell features a rough damage etched, but untextured front surface from the wafering processes. To combat the challenge of rough surfaces, several strategies to avoid shunt paths across carrier transport layers, absorber layers, and their interfaces are implemented. Moreover, the origin of reflection loss on this planar structure is investigated and the reflection loss is managed to below 4 mA cm⁻². In addition, the source of the voltage loss from the TOPCon bottom cell is identified and the device structure is redesigned to be suitable for tandem applications while still using mass production feasible fabrication methods. Overall, 27.6% efficiency is achieved for a monolithic perovskite/c-Si tandem device, with significant potential for future improvements.

中文翻译：

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使用工业制造的 TOPCon 器件的 27.6% 钙钛矿/c-Si 串联太阳能电池

串联电池结构是下一代光伏技术克服单结 Shockley-Queisser 极限最有希望的解决方案。尚未在工业生产线生产的 c-Si 底部电池上证明钙钛矿/c-Si 单片串联器件的制造。这里，使用在生产线上生产的具有隧道氧化物钝化接触 (TOPCon) 结构的 c-Si 电池作为串联器件的底部电池，以及具有溶液处理钙钛矿薄膜以形成串联器件的顶部电池。c-Si 电池的特点是蚀刻有粗糙的损伤，但晶圆加工过程中的前表面没有纹理。为了应对粗糙表面的挑战，实施了几种避免跨载流子传输层、吸收层及其界面的分流路径的策略。而且，^-2。此外，确定了 TOPCon 底部电池的电压损失源，并重新设计了器件结构以适用于串联应用，同时仍使用大规模生产可行的制造方法。总体而言，单片钙钛矿/c-Si 串联器件的效率为 27.6%，未来改进潜力巨大。