Although 2D non-van der Waals (vdW) layers show many intriguing physical and chemical properties as well as wide applications in the fields of electronics, catalysis, and energy storage, they still lack efficient synthetic approaches owing to their three-dimensionally bonded structures. Here, a facile approach to produce 2D non-vdW transition-metal chalcogenide (TMC) layers based on the conversion of vanadium-based MAX phase (V₂GeC) at high temperatures in hydrogen sulfide gas is developed. Associated with the etching of the germanium layers from the MAX phase, the vanadium layers are transformed into 2D non-vdW V₃S₄ layers. This originates from the self-intercalation of ordered V atoms within the vdW space of intermediated vdW vanadium disulfide layers during the conversion reaction. Owing to the ultrathin character, highly exposed active surface, and unique vacancy-enriched structure, the resultant 2D non-vdW V₃S₄ layers deliver a high reversible capacity of 341 mAh g⁻¹, good rate capabilities, and long-term cycling performance for zinc storage.

中文翻译：

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用于超快锌存储的钒基 MAX 相衍生的二维非范德华过渡金属硫属化物层

尽管二维非范德华 (vdW) 层显示出许多有趣的物理和化学性质以及在电子、催化和储能领域的广泛应用，但由于其三维键合结构，它们仍然缺乏有效的合成方法。_{在这里，开发了一种基于钒基 MAX 相 (V 2} GeC) 在硫化氢气体中的高温转化来生产 2D 非 vdW 过渡金属硫属化物 (TMC) 层的简便方法。与来自 MAX 相的锗层的蚀刻相关，钒层转变为 2D 非 vdW V ₃ S ₄层。这源于在转化反应期间，在中间的 vdW 二硫化钒层的 vdW 空间内有序 V 原子的自嵌入。由于超薄特性、高度暴露的活性表面和独特的空位富集结构，所得二维非 vdW V ₃ S ₄层具有 341 mAh g ^-1的高可逆容量、良好的倍率性能和长期循环锌储存的性能。