Abstract

High-frequency discharge plasma in halogen-containing gases is widely used in micro- and nanoelectronic technology for cleaning and dry etching the surface of semiconductor wafers and IC functional layers. In this paper, we study the surface quality (based on roughness data) of a semiconductor after plasma-chemical etching in R-23 freon plasma. Freon R-23 is widely used in the technology of etching Si, Ge, and a number of other materials (GaAs, GaP, InP), providing technologically acceptable interaction rates, and also satisfying the anisotropy and selectivity requirements. Nevertheless, the quality control of the surface of IC layers remains an urgent task of modern submicron electronics.

中文翻译：

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在氟利昂 R-23 的高频放电中构造硅

摘要

含卤素气体中的高频放电等离子体广泛用于微电子和纳米电子技术中，用于清洁和干法蚀刻半导体晶片和 IC 功能层的表面。在本文中，我们研究了在 R-23 氟利昂等离子体中进行等离子体化学蚀刻后半导体的表面质量（基于粗糙度数据）。氟利昂 R-23 广泛用于蚀刻 Si、Ge 和许多其他材料（GaAs、GaP、InP）的技术，提供技术上可接受的相互作用速率，同时满足各向异性和选择性要求。尽管如此，IC层表面的质量控制仍然是现代亚微米电子学的一项紧迫任务。