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The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors
Russian Microelectronics Pub Date : 2022-06-07 , DOI: 10.1134/s1063739722010036
Abdelaaziz Boulgheb, Maya Lakhdara, Saida Latreche

Abstract

The purpose of this paper is the study and the analysis of the impact of Polysilicon base on the phenomenon of self-heating and electrical performance for HBT SiGe transistor integrate from a 0.13 μm BiCMOS9 architecture: according to two different positions: below the intrinsic base SiGe, and at above this same base. In order to optimize the effect of the self-heating of these HBT and to see the impact of the poly base of the component, we used to simulate the structure of HBT SiGe, the COMSOL Multiphysics simulator. It is based on macroscopic semiconductor equations using the Drift-Diffusion Model (DDM), coupled to the interface HTS (Heat Transfer in Solids). An analysis of the effect of self-heating in SiGe TBHs from a 0.13 μm BiCMOS9 was achieved with two different Polysilicon architectures and above the SiGe base, in order to better understand the distribution of the heat on the component, to raise the maximum temperature on the HBT (Tmax). The static and dynamic performance of TBH SiGe, as well as self-heating is much better for a structure with Polysilicon below the SiGe base.



中文翻译:

0.13 µm SiGe异质结双极晶体管的热阻及自热效应分析多晶硅基极位置

摘要——

本文的目的是研究和分析多晶硅基极对从0.13 μm BiCMOS9架构集成的HBT SiGe晶体管的自发热现象和电性能的影响:根据两个不同的位置:在本征基极SiGe下方,并且在这个相同的基础之上。为了优化这些 HBT 的自热效果并查看组件的多晶硅基层的影响,我们使用 COMSOL Multiphysics 模拟器来模拟 HBT SiGe 的结构。它基于使用漂移-扩散模型 (DDM) 的宏观半导体方程,耦合到界面 HTS(固体传热)。使用两种不同的多晶硅架构并在 SiGe 基底之上实现了对来自 0.13 μm BiCMOS9 的 SiGe TBH 中自热效应的分析,最大。TBH SiGe 的静态和动态性能以及自发热对于在 SiGe 基底下方具有多晶硅的结构要好得多。

更新日期:2022-06-08
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