The spin transfer torque (STT), is studied in new cases of Josephson junctions containing triplet p-wave chiral ferromagnetic superconductor (FS) reservoirs. To be more precise, FS₁|spin orbit coupling layer (SOC₁)|Normal metal (N)|SOC₂|FS₂ materials have been investigated. Specifically, FS₁|N|FS₂ structure with one layer of SOC at FS₁|N interface and also two layers of SOC at both FS₁|N and N|FS₂ interfaces are investigated. For the structures including two SOC layers, both symmetric and asymmetric cases with respectively equal and different potential strengths are studied. The ballistic Josephson junctions are studied solving the Bogoliubov–de-Gennes equation. In particular, the cases with short normal metal contacts with thickness much smaller than the superconducting coherence length, ψ, are studied. It is obtained for the case with only one SOC layer, while the absolute value of the out-of-plane STT remains almost unchanged, its direction reverses for lower values of α, the angle between exchange fields of the two FSs. Also, the nanosystem in presence of two similar SOCs, exhibits lower out-of-plane STT. This is justified as the unit vector along the interface normal for the SOC₁ is in the opposite direction of the second SOC₂ layer. Hence, one can expect that these potentials fade the effect of each other. When the SOCs are not the same and have different values of potential strength, the out-of-plane STT reduces less which is attributed to slighter cancellation due to unequal potential strength. Moreover, the barrier strength is varied. It has been shown that the barrier strength increment changes the behavior of the STT. Particularly, it is found that it results in sign and value change of the STT. Further, the emergence of in-plane STTs in presence of SOC are confirmed and investigated for various systems.

中文翻译：

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存在自旋轨道耦合相互作用的约瑟夫森结与手性 p 波铁磁超导体储层

在包含三重态 p 波手性铁磁超导体 (FS) 储层的约瑟夫森结的新案例中研究了自旋转移力矩 (STT)。更准确地说，已经研究了FS ₁ |自旋轨道耦合层(SOC ₁ )|普通金属(N)|SOC ₂ |FS _2材料。具体而言，FS ₁ |N|FS _{2结构在 FS 1} |N 接口处具有一层 SOC ，在 FS ₁ |N 和 N|FS ₂处也具有两层 SOC接口进行了调查。对于包含两个 SOC 层的结构，研究了分别具有相等和不同潜在强度的对称和不对称情况。研究弹道约瑟夫森结求解 Bogoliubov–de-Gennes 方程。特别是，在厚度远小于超导相干长度的短普通金属触点的情况下，ψ, 被研究。它是针对只有一个 SOC 层的情况获得的，而面外 STT 的绝对值几乎保持不变，它的方向相反对于较低的值α，两个 FS 的交换场之间的角度。此外，存在两个相似 SOC 的纳米系统表现出较低的平面外 STT。_{这是合理的，因为沿着 SOC 1}的界面法线的单位矢量与第二个 SOC ₂的方向相反层。因此，可以预期这些电位会相互影响。当 SOC 不同且具有不同的势强值时，面外 STT 减少较少，这是由于势强不相等导致的轻微抵消。此外，屏障强度是变化的。已经表明，势垒强度增量改变了 STT 的行为。特别是，发现它会导致 STT 的符号和值发生变化。此外，针对各种系统确认并研究了存在 SOC 的平面内 STT 的出现。