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A 26–40 GHz Wideband Power Amplifier With Transformer-Based High-Order Matching Networks in 28-nm CMOS FD-SOI
IEEE Microwave and Wireless Components Letters ( IF 3 ) Pub Date : 2022-04-29 , DOI: 10.1109/lmwc.2022.3168264
Mohammad Javad Zavarei 1 , Kyunghwan Kim 1 , Ho-Jin Song 1
Affiliation  

This letter presents a wideband two-stage full Ka-band power amplifier (PA) with transformer-based matching networks (TMNs) in 28-nm CMOS fully depleted silicon on insulator (FD-SOI) technology. By considering the loss of the transformer, which has usually been ignored in previous works, methods to compensate for the nonflat gain in TMNs are studied and based on that, the initial guess for wideband TMNs design is extracted. Wideband performance in terms of gain and output power is delivered by designing wideband TMNs in the PA design and frequency-independent optimum load selection for the power cell. Measurement results show that the PA achieves 19 dB maximum gain with 13.8 GHz (42%) 3-dB bandwidth (BW), 16.1 dBm $\text{P}_{\mathbf {out-1dB}}$ with 13 GHz 1-dB BW, 17.1 dBm $\text{P}_{\mathbf {sat}}$ with 12 GHz 1-dB BW, and 25.3% peak power-added efficiency.

中文翻译:

具有基于变压器的高阶匹配网络的 26–40 GHz 宽带功率放大器,采用 28-nm CMOS FD-SOI

这封信介绍了一种宽带两级全 Ka 波段功率放大器 (PA),它采用 28 纳米 CMOS 全耗尽绝缘体上硅 (FD-SOI) 技术,具有基于变压器的匹配网络 (TMN)。通过考虑在以前的工作中通常被忽略的变压器损耗,研究了补偿 TMN 中非平坦增益的方法,并在此基础上提取了宽带 TMN 设计的初始猜测。通过在 PA 设计中设计宽带 TMN 和为电池选择与频率无关的最佳负载,可以提供增益和输出功率方面的宽带性能。测量结果表明,PA 在 13.8 GHz (42%) 3-dB 带宽 (BW) 下达到 19 dB 最大增益,16.1 dBm $\text{P}_{\mathbf {out-1dB}}$13 GHz 1-dB 带宽,17.1 dBm $\text{P}_{\mathbf {sat}}$具有 12 GHz 1-dB BW 和 25.3% 的峰值功率附加效率。
更新日期:2022-04-29
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