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A Stacked Segmented Adaptive Power Amplifier in 22nm FD-SOI
IEEE Microwave and Wireless Components Letters ( IF 3 ) Pub Date : 2022-04-14 , DOI: 10.1109/lmwc.2022.3159601
Aritra Banerjee , Barend van Liempd , Piet Wambacq

This letter presents a two-stage mm-wave power amplifier (PA) in 22nm fully depleted silicon-on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking. Transistor segmentation and back-gate bias control techniques are used in this adaptive PA which can work in high gain mode (HGM) and high linearity mode (HLM). The proposed PA achieves 17.9 dBm saturated output power ( $P_{s}at$ ), 27.6 dB power gain, 11.6 dBm output 1-dB compression point (OP1dB), and 11.0% peak power-added efficiency (PAE) at 74 GHz in the HGM. In the HLM, 17.1 dBm $P_{s}at$ , 21.2 dB power gain, 14.6 dBm OP1dB, and 12.9% peak PAE are obtained at 74 GHz.

中文翻译:

22nm FD-SOI 中的堆叠分段自适应功率放大器

这封信介绍了采用 22nm 完全耗尽绝缘体上硅 (FD-SOI) 技术的两级毫米波功率放大器 (PA)。通过晶体管堆叠获得高输出功率。该自适应功率放大器采用晶体管分段和背栅偏置控制技术,可在高增益模式 (HGM) 和高线性模式 (HLM) 下工作。建议的 PA 实现了 17.9 dBm 的饱和输出功率( $P_{s}at$)、27.6 dB 功率增益、11.6 dBm 输出 1-dB 压缩点 (OP1dB) 和 HGM 中 74 GHz 时的 11.0% 峰值功率附加效率 (PAE)。在 HLM 中,17.1 dBm $P_{s}at$, 21.2 dB 功率增益、14.6 dBm OP1dB 和 12.9% 峰值 PAE 在 74 GHz 获得。
更新日期:2022-04-14
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