In this letter, we are reporting on the characterization of the on-chip metal–oxide–metal (MOM) capacitors that use “self-inductance cancellation” technique resulting in high-performance operation in radio frequency (RF)/millimeter-wave (mm-wave) regime. The utilized method helps mitigate the mutual magnetic induction between the metal fingers of a MOM capacitor while they are placed in proximity to each other, by controlling the direction of the RF current flow. More than two times inductance cancellation is achieved, thus resulting in an increase of the self-resonance frequency and quality factor ( $Q$ -factor) of the RF capacitor. The test structures are fabricated using Intel 16 FinFET technology, where postsilicon data show a good agreement between the theory and simulation. This methodology is CMOS compatible and is applicable to RF/mm-wave circuits that employ RF capacitors toward improving the RF system performance.

中文翻译：

---

用于射频和毫米波应用的具有“自感消除”功能的高 Q 片上电容器

在这封信中，我们报告了片上金属氧化物金属 (MOM) 电容器的特性，该电容器使用“自感消除”技术，可在射频 (RF)/毫米波 (RF)/毫米波 (毫米波）制度。所使用的方法通过控制射频电流的方向，有助于减轻 MOM 电容器的金属指之间的互磁感应，同时它们彼此靠近放置。实现了两倍以上的电感抵消，从而导致自谐振频率和品质因数增加（ $Q$-因素）的射频电容器。测试结构是使用 Intel 16 FinFET 技术制造的，其中后硅数据显示理论和仿真之间的一致性很好。该方法与 CMOS 兼容，适用于采用射频电容器以提高射频系统性能的射频/毫米波电路。