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Ultralow Power E-Band Low-Noise Amplifier With Three-Stacked Current-Sharing Amplification Stages in 28-nm CMOS
IEEE Microwave and Wireless Components Letters ( IF 3 ) Pub Date : 2022-04-05 , DOI: 10.1109/lmwc.2022.3161998
Liang Qiu , Jiabing Liu , Qianyi Dong , Zhihao Lv , Kailong Zhao , Shengjie Wang , Yen-Cheng Kuan , Qun Jane Gu , Xiaopeng Yu , Chunyi Song , Zhiwei Xu

This letter presents a differential ultralow power low-noise amplifier (LNA) with stacked three-stage common-source (CS) amplification cells. A three-coil transformer is developed to boost each stage’s $g_{m}$ and reuse current, which renders high gain, low noise, and low power consumption. The proposed LNA has been implemented in a 28-nm CMOS process and achieves a peak gain of 13.48 dB and a minimum noise figure (NF $_{\mathrm {min}}$ ) of 4.56 dB. The measured 3-dB gain bandwidth ( ${\text {BW}}_{3\,\text {dB}}$ ) is from 69.6 to 76.2 GHz. The LNA consumes 3.64-mW power from a 1.4-V supply and occupies 0.088-mm2 area excluding pads.

中文翻译:

超低功耗 E 波段低噪声放大器,具有 28-nm CMOS 中的三个堆叠电流共享放大级

这封信介绍了具有堆叠式三级共源 (CS) 放大单元的差分超低功耗低噪声放大器 (LNA)。开发了一个三线圈变压器来提升每个阶段的 $g_{m}$并复用电流,实现高增益、低噪声和低功耗。所提出的 LNA 采用 28-nm CMOS 工艺实现,峰值增益为 13.48 dB,噪声系数 (NF $_{\mathrm {分钟}}$) 的 4.56 分贝。测得的 3dB 增益带宽( ${\text {BW}}_{3\,\text {dB}}$) 为 69.6 至 76.2 GHz。LNA 从 1.4-V 电源消耗 3.64-mW 功率,并占用 0.088-mm 2面积(不包括焊盘)。
更新日期:2022-04-05
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