Transistors based on two-dimensional semiconductors suffer from electrical instabilities because charges readily get trapped in the gate oxides. As charge trapping is sensitive to the energetic alignment of the channel Fermi level to the defect bands in the oxide, the number of electrically active traps can be reduced by tuning the channel Fermi level.

中文翻译：

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增强二维晶体管的电稳定性

基于二维半导体的晶体管存在电不稳定性，因为电荷很容易被捕获在栅极氧化物中。由于电荷俘获对沟道费米能级与氧化物中缺陷带的能量对齐敏感，因此可以通过调整沟道费米能级来减少电活性陷阱的数量。