Recently reported 2D ferromagnets show tremendous potential for their application in low-dimensional spintronic devices. Semiconductor heterostructure consisting of 2D ferromagnet integrated with other suitable 2D semiconducting materials may pave the way for designing robust and sophisticated spin-transport devices within a few nanometer scales. In this regard, a detailed understanding of the interface properties of 2D ferromagnetic materials and other 2D semiconductors is highly essential. Herein, the interface properties in the heterostructure made-up of CrX₃ (X = Cl, Br, and I) monolayer and transition-metal dichalcogenides (TMDC; MoS₂, MoSe₂, and WS₂) monolayer, using first-principle calculations are systematically studied. This study predicts that a robust spin-dependent barrier originated at the CrX₃/TMDC interface. It can lead to a significantly large spin-filtering at the interface while spin-transport through this heterojunction, which will be highly beneficial for spintronic devices applications. Further, detailed spin-dependent transport studies carried out through Co/CrI₃/TMDC/CrI₃/Co magnetic heterojunctions and substantial tunnel magnetoresistance up to 590%, estimated for these systems.

中文翻译：

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基于二维铁磁体和过渡金属二硫属化物的范德华异质结的自旋输运：第一性原理计算研究

最近报道的二维铁磁体在低维自旋电子器件中的应用显示出巨大的潜力。由与其他合适的二维半导体材料集成的二维铁磁体组成的半导体异质结构可以为在几纳米尺度内设计稳健和复杂的自旋传输器件铺平道路。在这方面，详细了解二维铁磁材料和其他二维半导体的界面特性非常重要。在此，由 CrX ₃ (X = Cl、Br 和 I) 单层和过渡金属二硫化物 (TMDC; MoS ₂、MoSe ₂和 WS _{2 ) 组成的异质结构中的界面特性}) 单层，使用第一性原理计算进行了系统研究。该研究预测，在 CrX ₃ /TMDC 界面产生了一个强大的自旋相关势垒。它可以在通过该异质结进行自旋传输的同时在界面处产生非常大的自旋过滤，这对自旋电子器件应用非常有利。_{此外，通过 Co/CrI 3} /TMDC/CrI ₃ /Co 磁性异质结和高达 590% 的大量隧道磁阻对这些系统进行了详细的自旋相关传输研究。