Recently, Cr³⁺-activated phosphors have garnered attention for broadband near-infrared phosphor converted light-emitting diode (NIR pc-LED) applications, but usually display low efficiency. Herein, we designed and synthesized a novel efficient broadband NIR phosphor NaIn_1−xP₂O₇:xCr³⁺ (in brief NIP:Cr³⁺) for NIR pc-LEDs. The NIP:0.04Cr³⁺ phosphor exhibits broadband NIR emission with a peak maximum at 856 nm and a full width at half maximum (FWHM) of 133 nm under 480 nm excitation. The crystal field parameters, luminescence decay curves, and temperature-dependence photoluminescence characteristics of the NIP:Cr³⁺ phosphor were investigated and discussed to understand its optical properties further. The NIP:0.04Cr³⁺ phosphor has a superior internal quantum efficiency (IQE) of ∼71.3%, and its external quantum efficiency (EQE) increased from ∼30.1% to ∼35.7% via the introduction of Li₂CO₃ as the flux. In addition, a NIR pc-LED was fabricated by combining the as-synthesized phosphor with a 460 nm blue LED chip, which can achieve a NIR output power of 39.11 mW and a photoelectric efficiency of 10.93% at 120 mA drive current, and the fabricated pc-LED performs well in night vision applications. These findings indicate that the NIP:Cr³⁺ phosphor has considerable application potential in broadband NIR pc-LEDs.

中文翻译：

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用于宽带近红外 LED 应用的高效 Cr3+ 激活 NaInP2O7 荧光粉

最近，Cr ³⁺激活的荧光粉在宽带近红外荧光粉转换发光二极管（NIR pc-LED）应用中受到关注，但通常效率较低。在此，我们设计并合成了一种用于 NIR pc-LED的新型高效宽带 NIR 荧光粉 NaIn _{1− x} P ₂ O ₇ : x Cr ³⁺（简称 NIP:Cr ^{3+ ）。}NIP:0.04Cr ³⁺荧光粉在 480 nm 激发下具有 856 nm 的峰值和 133 nm 的半高全宽 (FWHM) 的宽带 NIR 发射。NIP:Cr的晶体场参数、发光衰减曲线和温度依赖性光致发光特性^对3+荧光粉进行了研究和讨论，以进一步了解其光学特性。NIP:0.04Cr ³⁺荧光粉具有~71.3%的优异内量子效率（IQE），通过引入Li ₂ CO ₃作为助熔剂. 此外，将合成的荧光粉与 460 nm 蓝光 LED 芯片相结合，制成了 NIR pc-LED，在 120 mA 驱动电流下可实现 39.11 mW 的 NIR 输出功率和 10.93% 的光电效率。制造的 pc-LED 在夜视应用中表现良好。这些发现表明 NIP:Cr ³⁺荧光粉在宽带 NIR pc-LED 中具有相当大的应用潜力。