Quantum dot light-emitting diodes (QLEDs) are a class of high-performance solution-processed electroluminescent (EL) devices highly attractive for next-generation display applications. Despite the encouraging advances in the mechanism investigation, material chemistry, and device engineering of QLEDs, the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different devices. Here, we report a comprehensive study on the characterizations of QLEDs using various methods. We show that the emission non-uniformity across the active area, non-Lambertian angular distributions of EL intensity, and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device efficiency. Larger errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay curves. Finally, we suggest a set of recommended practices and a checklist for device characterizations, aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.

量子点发光二极管 (QLED) 是一类高性能溶液处理电致发光 (EL) 器件，对下一代显示应用极具吸引力。尽管在 QLED 的机理研究、材料化学和器件工程方面取得了令人鼓舞的进展，但缺乏用于表征 QLED 的标准协议可能会导致器件参数测量不准确和不同器件的无效比较。在这里，我们报告了使用各种方法对 QLED 的表征进行的全面研究。我们表明，有源区域的发射不均匀性、EL 强度的非朗伯角分布以及所采用的光谱发光效率函数的差异可能会导致器件效率出现显着误差。使用寿命测量中较大的误差可能是由于初始亮度的确定不准确和分析亮度衰减曲线的方法不一致。最后，我们提出了一套推荐做法和设备表征清单，旨在帮助 QLED 领域的研究人员实现准确可靠的测量。