Flexible transparent conductive films are gaining attention day by day over the last few years due to it is a key component of next generation flexible electronics and optoelectronic devices. Indium tin oxide (ITO) as one of the most widely used transparent conductive material is limited by the traditional deposition approach cannot be achieve ultra-thin, which results in its brittle nature. Herein, a novel strategy for fabricating highly transparent conductive films by liquid metal interface phase separation technique based on low-melting liquid metal of In_xSn_100-x alloy is reported, during the solid-to-liquid phase transition of alloy, the monolayer of surface oxide film segregated with the bulk phase and was printed on the flexible polyethylene-naphthalate (PEN) substrate under the van der Waals. This novel strategy can directly print the ultra-thin self-oxide with the structure of ITO on PEN substrate, with the resulting of transparency over 97.5% and resistivity as low as 0.21 kΩ cm, providing a new way of low-cost raw ITO material as well as the personalized preparation strategy. The desirable highly transparent conductive films are comparable to recently reported ITO film, together with advantages of pretty steady, make them attractive as various flexible transparent conductive electrodes, for example, an ultra-thin ITO film is developed for luminescent devices.

柔性透明导电薄膜由于是下一代柔性电子和光电器件的关键组成部分，在过去几年中日益受到关注。氧化铟锡（ITO）作为目前应用最广泛的透明导电材料之一，受限于传统的沉积方式无法实现超薄，导致其易碎。_{在此，基于In x} Sn _{100- x}低熔点液态金属的液态金属界面相分离技术制备高透明导电薄膜的新策略据报道，在合金的固液相变过程中，单层表面氧化膜与体相分离，并在范德华下印刷在柔性聚萘二甲酸乙二醇酯 (PEN) 基板上。这种新颖的策略可以在PEN基板上直接印刷具有ITO结构的超薄自氧化物，其透明度超过97.5%，电阻率低至0.21 kΩ cm，为低成本ITO原料提供了新途径以及个性化的准备策略。理想的高透明导电薄膜可与最近报道的 ITO 薄膜相媲美，加上相当稳定的优点，使其成为各种柔性透明导电电极的吸引力，例如，开发用于发光器件的超薄 ITO 薄膜。