In this paper, a novel extended-temperature current–voltage (I-V) model for Gallium Nitride (GaN) high electron mobility transistors (HEMT) devices is proposed. Revised from the traditional Materka nonlinear model, the self-heating and trapping effects are discussed in the paper and incorporated into the proposed model. Compared to the Materka model and other published models, the proposed model is more accurate in both the saturation region and the knee region. A novel sequential temperature-dependent modeling approach is also proposed to minimize the accumulated error from temperature regression of multiple model parameters, while the temperature range of the I-V model is extended to 300 °C. Finally, a simple class-A amplifier circuit is built and tested from 25 °C to 300 °C to validate the proposed model. The test result closely matches with the predicted behavior of the proposed model, especially at high temperatures.

在本文中，提出了一种用于氮化镓 (GaN) 高电子迁移率晶体管 (HEMT) 器件的新型扩展温度电流-电压 (IV) 模型。本文对传统的 Materka 非线性模型进行了修改，讨论了自热和捕获效应，并将其纳入所提出的模型中。与 Materka 模型和其他已发表的模型相比，所提出的模型在饱和区域和拐点区域都更加准确。还提出了一种新的顺序温度相关建模方法，以最小化多个模型参数的温度回归的累积误差，同时将 IV 模型的温度范围扩展到 300°C。最后，构建了一个简单的 A 类放大器电路，并在 25°C 至 300°C 的温度范围内进行了测试，以验证所提出的模型。