Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator to the conventional IMPLY scheme. This allows performing a preliminary READ operation and hence the SET operation only in the case it is actually required. This work explores the SIMPLY logic scheme using nanoscale spin-transfer torque magnetic tunnel junction (STT-MTJ) devices. The performance of the STT-MTJ based SIMPLY architecture is analyzed by varying the load resistor and applied voltages to implement both READ and SET operations, while also investigating the effect of temperature on circuit operation. Obtained results show an existing tradeoff between error rate and energy consumption, which can be effectively managed by properly setting the values of load resistor and applied voltages. In addition, our analysis proves that tracking the temperature dependence of the MTJ properties through a proportional to absolute temperature (PTAT) reference voltage at the input of the comparator is beneficial to mitigate the reliability degradation under temperature variations.

最近提出了智能材料蕴涵 (SIMPLY) 逻辑，用于设计基于非易失性电阻存储器件的节能型内存逻辑 (LIM) 架构。通过在传统的 IMPLY 方案中添加一个比较器来启用 SIMPLY 逻辑。这允许执行初步的 READ 操作，因此仅在实际需要的情况下执行 SET 操作。这项工作探索了使用纳米级自旋转移矩磁隧道结 (STT-MTJ) 器件的简单逻辑方案。基于 STT-MTJ 的 SIMPLY 架构的性能通过改变负载电阻和施加的电压来实现 READ 和 SET 操作进行分析，同时还研究了温度对电路操作的影响。获得的结果表明错误率和能耗之间存在折衷，这可以通过适当设置负载电阻和施加电压的值来有效管理。此外，我们的分析证明，通过比较器输入端与绝对温度 (PTAT) 成比例的参考电压来跟踪 MTJ 特性的温度依赖性，有利于减轻温度变化下的可靠性下降。