The UV detection capabilities of III-nitride dual channel triangular microcantilevers, consisting of AlGaN/GaN two-dimensional electron gas channels with an intervening GaN layer, were investigated using 265, 315, and 375 nm illumination. High spectral responsivities, up to 2.3 × 10⁴ A/W, were observed along with a very low dark current of a few pA, which resulted in a detectivity of 4.99 × 10⁸ Jones. A high UV–visible rejection ratio of 10⁴ was also measured between the wavelengths of 265 and 450 nm. A simple analysis of the photogenerated carriers indicates that the high responsivity arises out of a trap related high internal gain mechanism, while the low dark current and high photocurrent are caused by the suspended GaN interchannel layer and tapered channel geometry. The unique combination of high responsivity and detectivity, high gain, low dark currents, and high UV–visible rejection ratio can lead to the design of novel high-performance visible blind and solar blind UV photodetectors.

中文翻译：

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基于 AlGaN/GaN 双通道三角形微悬臂梁的紫外探测器

使用 265、315 和 375 nm 照明研究了 III 族氮化物双通道三角形微悬臂梁的紫外检测能力，该微悬臂梁由 AlGaN/GaN 二维电子气通道和中间的 GaN 层组成。观察到高达 2.3 × 10 ⁴ A/W 的高光谱响应度以及几 pA 的非常低的暗电流，这导致了 4.99 × 10 ⁸琼斯的检测率。^{10 4}的高紫外-可见光抑制比还在 265 和 450 nm 的波长之间测量。对光生载流子的简单分析表明，高响应度源于与陷阱相关的高内部增益机制，而低暗电流和高光电流是由悬浮的 GaN 沟道间层和锥形沟道几何形状引起的。高响应度和检测率、高增益、低暗电流和高紫外-可见光抑制比的独特组合可以设计出新型高性能可见盲和太阳盲紫外光电探测器。