This article proposes a reconfigurable single-stage regulating asymmetrical full-wave step-down rectifier (SDR) for fast wireless charging. The SDR is reconfigurable into a step-up power amplifier (SUPA) for device-to-device (D2D) wireless charging. The SDR and SUPA can have a direct connection with the battery without an additional voltage regulator module (VRM). With the single-stage structure, the transmitting (TX) and receiving (RX) ac voltages across the resonant coil can be boosted, which greatly reduces the coil currents and losses, improving the D2D charging power. A reconfigurable controller for the TX/RX mode selection, as well as the switching timing control, is designed. The chip is fabricated in 0.35- $\mu \text{m}$ CMOS that contains 20-V devices. For the asymmetrical operation, one GaN device is used for the high current path. Also, zero-voltage switching (ZVS) is realized for all the power transistors with one small (180 nH in the 4015 package) power inductor. The bidirectional D2D WPT system achieves a maximum charging power of 5.1 W with a D2D total efficiency of 46.3% and a charging distance of 1.6 cm. Finally, the peak total efficiency is 51.4% with a charging power of 3.4 W and a charging distance of 1 cm.

中文翻译：

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用于双向设备到设备无线快速充电的可重构单级非对称全波降压整流器

本文提出了一种用于快速无线充电的可重构单级调节非对称全波降压整流器 (SDR)。SDR 可重新配置为升压功率放大器 (SUPA)，用于设备到设备 (D2D) 无线充电。SDR 和 SUPA 可以与电池直接连接，无需额外的电压调节器模块 (VRM)。采用单级结构，可以提升谐振线圈两端的发射（TX）和接收（RX）交流电压，从而大大降低线圈电流和损耗，提高D2D充电功率。设计了用于TX/RX模式选择以及开关时序控制的可重构控制器。该芯片制造在 0.35- $\mu \text{m}$包含 20-V 器件的 CMOS。对于非对称操作，一个 GaN 器件用于高电流路径。此外，使用一个小型（4015 封装中为 180 nH）功率电感器为所有功率晶体管实现了零电压开关 (ZVS)。双向D2D WPT系统最大充电功率为5.1 W，D2D总效率为46.3%，充电距离为1.6 cm。最后，峰值总效率为 51.4%，充电功率为 3.4 W，充电距离为 1 cm。