The effect of leakage of the plasticizer from the ion-selective membrane into the ion-to-electron transducer of all-solid-state potentiometric sensors is considered for the first time. The plasticizer can be transferred to the transducer phase, either during ion-selective membrane application or later; in both cases, its presence can affect the performance of the sensors. Clearly, this effect is most pronounced if the transducer is dispersible in the plasticizer. Towards this end, it is shown that application as the transducer of plasticizer dispersable poly(3-hexylthiophene) compared to typically used (non-dispersible) poly(3-octylthiophene) results in sensors offering higher reproducibility of recorded potentials equal to ±1.4 mV and ±2.5 mV, respectively (within-day test, n = 6). Although poly(3-hexylthiophene) was also found in the membrane in the solvent dispersed, neutral emission active form, the analytical parameters of poly(3-hexylthiophene) based sensors including selectivity were improved or comparable to those of classical poly(3-octylthiophene) transducer sensors.

中文翻译：

---

全固态电极中的离子选择性膜增塑剂泄漏——一种及时提高潜在读数稳定性的不明显方法

首次考虑了增塑剂从离子选择膜泄漏到全固态电位传感器的离子电子换能器中的影响。增塑剂可以在离子选择性膜应用期间或之后转移到换能器相；在这两种情况下，它的存在都会影响传感器的性能。显然，如果换能器可分散在增塑剂中，这种效果最为明显。为此，与通常使用的（不可分散的）聚（3-辛基噻吩）相比，用作增塑剂可分散聚（3-己基噻吩）的传感器的应用表明，传感器可提供更高的记录电位再现性，等于±1.4 mV和 ±2.5 mV，分别（日内测试，n= 6)。尽管聚 (3-己基噻吩) 也以溶剂分散、中性发射活性形式存在于膜中，但基于聚 (3-己基噻吩) 的传感器的分析参数（包括选择性）得到了改善或与经典聚 (3-辛基噻吩) 相当) 换能器传感器。