Metal–semiconductor junctions are essential components in electronic and optoelectronic devices. With two-dimensional semiconductors, conventional metal deposition via ion bombardment results in chemical disorder and Fermi-level pinning. Transfer printing techniques—in which metal electrodes are predeposited and transferred to create van der Waals junctions—have thus been developed, but the predeposition of metal electrodes creates chemical bonds on the substrate, which makes subsequent transfer difficult. Here we report a graphene-assisted metal transfer printing process that can be used to form van der Waals contacts between two-dimensional materials and three-dimensional metal electrodes. We show that arrays of metal electrodes with both weak (copper, silver and gold) and strong (platinum, titanium and nickel) adhesion strengths can be delaminated from a four-inch graphene wafer due to its weak van der Waals force and absence of dangling bonds, and transfer printed onto different substrates (graphene, molybdenum disulfide and silicon dioxide). We use this approach to create molybdenum disulfide field-effect transistors with different printed metal electrodes, allowing the Schottky barrier height to be tuned and ohmic and Schottky contacts to be formed. We also demonstrate the batch production of molybdenum disulfide transistor arrays with uniform electrical characteristics.

金属-半导体结是电子和光电设备中必不可少的组件。对于二维半导体，通过离子轰击进行的传统金属沉积会导致化学无序和费米能级钉扎。因此，已经开发了转移印刷技术——其中金属电极被预沉积并转移以产生范德华结——但金属电极的预沉积会在基板上产生化学键，这使得后续转移变得困难。在这里，我们报告了一种石墨烯辅助金属转移印刷工艺，该工艺可用于在二维材料和三维金属电极之间形成范德华接触。我们展示了具有弱（铜、银和金）和强（铂、钛和镍）的粘合强度可以从 4 英寸石墨烯晶片上剥离，因为它的范德华力较弱且没有悬空键，并转移印刷到不同的基材（石墨烯、二硫化钼和二氧化硅）上。我们使用这种方法来制造具有不同印刷金属电极的二硫化钼场效应晶体管，从而可以调整肖特基势垒高度并形成欧姆接触和肖特基接触。我们还展示了具有均匀电气特性的二硫化钼晶体管阵列的批量生产。我们使用这种方法来制造具有不同印刷金属电极的二硫化钼场效应晶体管，从而可以调整肖特基势垒高度并形成欧姆接触和肖特基接触。我们还展示了具有均匀电气特性的二硫化钼晶体管阵列的批量生产。我们使用这种方法来制造具有不同印刷金属电极的二硫化钼场效应晶体管，从而可以调整肖特基势垒高度并形成欧姆接触和肖特基接触。我们还展示了具有均匀电气特性的二硫化钼晶体管阵列的批量生产。