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Site-Specific Fabrication of Blue Quantum Emitters in Hexagonal Boron Nitride
ACS Photonics ( IF 7 ) Pub Date : 2022-05-18 , DOI: 10.1021/acsphotonics.2c00631
Angus Gale 1 , Chi Li 1 , Yongliang Chen 1 , Kenji Watanabe 2 , Takashi Taniguchi 3 , Igor Aharonovich 1, 4 , Milos Toth 1, 4
Affiliation  

Hexagonal boron nitride (hBN) is gaining considerable attention as a solid-state host of quantum emitters from the ultraviolet to the near-infrared spectral ranges. However, the atomic structures of most of the emitters are speculative or unknown, and emitter fabrication methods typically suffer from poor reproducibility, spatial accuracy, or spectral specificity. Here, we present a robust, electron beam technique for site-specific fabrication of blue quantum emitters with a zero-phonon line at 436 nm (2.8 eV). We show that the emission intensity is proportional to electron dose and that the efficacy of the fabrication method correlates with a defect emission at 305 nm (4.1 eV). We attribute blue emitter generation to the fragmentation of carbon clusters by electron impact and show that the robustness and universality of the emitter fabrication technique are enhanced by a pre-irradiation annealing treatment. Our results provide important insights into photophysical properties and structure of defects in hBN and a framework for site-specific fabrication of quantum emitters in hBN.

中文翻译:

六方氮化硼中蓝色量子发射器的现场特定制造

六方氮化硼 (hBN) 作为从紫外到近红外光谱范围的量子发射器的固态主体,正受到相当多的关注。然而,大多数发射器的原子结构是推测性的或未知的,并且发射器制造方法通常具有较差的可重复性、空间精度或光谱特异性。在这里,我们提出了一种强大的电子束技术,用于在 436 nm (2.8 eV) 处特定位置制造具有零声子线的蓝色量子发射器。我们表明发射强度与电子剂量成正比,并且制造方法的功效与 305 nm (4.1 eV) 的缺陷发射相关。我们将蓝色发射器的产生归因于电子撞击导致碳簇的碎裂,并表明发射器制造技术的稳健性和普遍性通过预辐照退火处理得到增强。我们的结果提供了对 hBN 缺陷的光物理性质和结构的重要见解,以及在 hBN 中特定位置制造量子发射器的框架。
更新日期:2022-05-18
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