Silicon nitride, with ultralow propagation loss and a wide transparency window, offers an exciting platform to explore integrated photonic devices for various emerging applications. It is appealing to combine the intrinsic optical properties of two-dimensional layered materials with high-quality optical waveguides and resonators to achieve functional devices in a single chip. Here we demonstrate a micro-ring resonator-based phase modulator integrated with few-layer ${\mathrm{MoS}}_2$. The ionic liquid is employed directly on the surface of ${\mathrm{MoS}}_2$ to form a capacitor configuration. The effective index of the composite ${\mathrm{MoS}}_2–\mathrm{SiN}$ waveguide can be modulated via adjusting bias voltages to achieve different charged doping induced electro-refractive responses in ${\mathrm{MoS}}_2$ film. The maximum effective index modulation of the composite ${\mathrm{MoS}}_2–\mathrm{SiN}$ waveguide can be achieved to $0.45\times {10}^{-3}$. The phase tuning efficiency is measured to be 29.42 pm/V, corresponding to a ${\mathit{V}}_{\mathit{\pi }}\mathit{L}$ of 0.69 V·cm. Since the micro-ring resonator is designed near the critical coupling regime, the coupling condition between the bus waveguide and micro-ring resonator can also be engineered from under-coupling to over-coupling regime during the charged doping process. That can be involved as a degree of freedom for the coupling tailoring. The ability to modulate the effective index with two-dimensional materials and the robust nature of the heterostructure integrated phase modulator could be useful for engineering reliable ultra-compact and low-power-consumption integrated photonic devices.

中文翻译：

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基于二维层状材料的异质集成相位调制器

氮化硅具有超低传播损耗和宽透明窗口，为探索各种新兴应用的集成光子器件提供了一个令人兴奋的平台。将二维层状材料的固有光学特性与高质量的光波导和谐振器相结合，在单个芯片中实现功能器件是很有吸引力的。在这里，我们展示了一种基于微环谐振器的相位调制器，集成了几层${\mathrm{二硫化钼}}_2$. 离子液体直接用于表面${\mathrm{二硫化钼}}_2$形成一个电容器配置。复合材料的有效指标${\mathrm{二硫化钼}}_2–罪$波导可以通过调整偏置电压来调制，以实现不同的带电掺杂引起的电折射响应${\mathrm{二硫化钼}}_2$电影。复合材料的最大有效折射率调制${\mathrm{二硫化钼}}_2–罪$波导可以实现$0.45\times {10}^{-3}$. 相位调谐效率测量为 29.42 pm/V，对应于${\mathit{五}}_{\mathit{\pi }}\mathit{大号}$0.69 V·cm。由于微环谐振器设计在临界耦合状态附近，因此在带电掺杂过程中，总线波导和微环谐振器之间的耦合条件也可以从欠耦合到过耦合状态进行设计。这可以作为耦合剪裁的自由度。用二维材料调制有效折射率的能力和异质结构集成相位调制器的稳健特性可用于设计可靠的超紧凑和低功耗集成光子器件。