Lithium niobate on insulator (LNOI) has become an intriguing platform for integrated photonics for applications in communications, microwave photonics, and computing. Whereas, integrated devices including modulators, resonators, and lasers with high performance have been recently realized on the LNOI platform, high-speed photodetectors, an essential building block in photonic integrated circuits, have not been demonstrated on LNOI yet. Here, we demonstrate for the first time, heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength. The photodiodes are based on an n-down InGaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth. Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.

中文翻译：

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集成在薄膜铌酸锂平台上的高性能改进型单程载流子光电二极管

绝缘体上铌酸锂 (LNOI) 已成为用于通信、微波光子学和计算应用的集成光子学的有趣平台。鉴于最近已在 LNOI 平台上实现了包括高性能调制器、谐振器和激光器在内的集成设备，但尚未在 LNOI 上展示作为光子集成电路的重要组成部分的高速光电探测器。在这里，我们首次在 LNOI 上展示了异构集成的改进型单行载波光电二极管，其带宽达到创纪录的 80 GHz，在 1550 nm 波长下的响应度为 0.6 A/W。光电二极管基于 n-down InGaAs/InP 外延层结构，该结构针对高载流子传输时间限制带宽进行了优化。