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Intrinsically shunted NbN/TaN/NbN Josephson junctions on Si substrates for large-scale integrated circuits applications
Superconductor Science and Technology ( IF 3.6 ) Pub Date : 2022-04-25 , DOI: 10.1088/1361-6668/ac591d
Kaixin Yan 1, 2, 3, 4 , Lu Zhang 1, 2 , Yulong Zhong 1, 2, 4 , Jiasheng Shi 1, 2, 3 , Weifeng Shi 1, 2 , Ling Wu 1, 2 , Huiwu Wang 1, 2 , Lei Chen 1, 2, 4 , Jie Ren 1, 2, 4 , Wei Peng 1, 2, 4 , Zhen Wang 1, 2, 3, 4
Affiliation  

Superconducting circuits based on Josephson junctions have the potential to achieve high speed and ultra-low power consumption, but their integration is limited by the low controllability of Nb-based tunnel junction and the existence of shunt resistors. In this work, we report the fabrication of superconductor/normal metal/superconductor (SNS) Josephson junctions with high reproducibility on oxidized Si substrates. The junctions based on NbN/TaN/NbN trilayers measured at 4.2 K show excellent Josephson properties with a wide range of critical current (I c) from 227 to 2000 μA. The variations of critical current density (J c) and characteristic voltage (V c) are respectively less than 7.1% and 7.5% in the 2 inch region. The standard deviation of I c is calculated to be less than 1.7% for Josephson arrays with the number of junctions up to 10 000 occupying an area of 0.34 mm2. The results provide a guarantee for the applications of NbN-SNS Josephson junctions in superconducting large-scale integrated circuits.

中文翻译:

用于大规模集成电路应用的 Si 基板上本征旁路 NbN/TaN/NbN 约瑟夫森结

基于约瑟夫森结的超导电路具有实现高速和超低功耗的潜力,但其集成度受到铌基隧道结可控性低和分流电阻存在的限制。在这项工作中,我们报告了在氧化硅基板上具有高再现性的超导体/普通金属/超导体 (SNS) 约瑟夫森结的制造。在 4.2 K 下测量的基于 NbN/TaN/NbN 三层结构的结显示出优异的约瑟夫森特性,具有广泛的临界电流( c ) 从 227 到 2000μA. 临界电流密度的变化( c ) 和特征电压 (V c )在2英寸区域分别小于7.1%和7.5%。的标准偏差 经计算,约瑟夫森阵列的c小于 1.7%,结数最多为 10000,占据的面积为 0.34 mm 2。该结果为NbN-SNS约瑟夫森结在超导大规模集成电路中的应用提供了保证。
更新日期:2022-04-25
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