This work compares the four-wave mixing (FWM) effect in epitaxial quantum dot (QD) lasers grown on silicon with quantum well (QW) lasers. A comparison of theory and experiment results shows that the measured FWM coefficient is in good agreement with theoretical predictions. The gain in signal power is higher for p-doped QD lasers than for undoped lasers, despite the same FWM coefficient. Owing to the near-zero linewidth enhancement factor, QD lasers exhibit FWM coefficients and conversion efficiency that are more than one order of magnitude higher than those of QW lasers. Thus, this leads to self-mode locking in QD lasers. These findings are useful for developing on-chip sources for photonic integrated circuits on silicon.

中文翻译：

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直接在硅上生长的 1.3 μm 外延量子点激光器中的四波混频

这项工作比较了在硅上生长的外延量子点 (QD) 激光器与量子阱 (QW) 激光器中的四波混合 (FWM) 效应。理论与实验结果对比表明，实测FWM系数与理论预测吻合较好。尽管 FWM 系数相同，但 p 掺杂 QD 激光器的信号功率增益高于未掺杂激光器。由于接近零的线宽增强因子，QD 激光器的 FWM 系数和转换效率比 QW 激光器高一个数量级以上。因此，这导致 QD 激光器中的自锁模。这些发现对于开发硅上光子集成电路的片上光源非常有用。