Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average on/off ratio of 103, and a low set/reset voltage variability. Metal/monolayer h-BN/graphite/Co devices exhibit self-compliant current BRS characteristics. Both metal/h-BN/Ni and metal/h-BN/graphite/Co devices show the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.

中文翻译：

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不同电极单层六方氮化硼原子电阻的阻变特性

通过使用具有不同电极材料的金属绝缘体金属配置，研究了基于分子束外延生长的单层六方氮化硼 (h-BN) 原子电阻的电阻开关特性。Au/单层 h-BN/Ni 器件展示了无成型双极电阻开关 (BRS) 行为、在 100 mA 的高顺从电流下高达 97 个循环的良好耐久性、103 的平均开/关比以及低设置/重置电压可变性。金属/单层 h-BN/石墨/Co 器件表现出自兼容的电流 BRS 特性。金属/h-BN/Ni 和金属/h-BN/石墨/Co 器件都显示出 BRS、单极电阻开关 (URS) 和非易失性阈值开关 (TH) 模式的共存。