This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The fabricated transistors show a negligible hysteresis, a SS of 39 mV/dec, a large gate voltage swing of >4.2 V, and achieving an excellent quality factor Q = gm/SS of 6.3 μS-dec/ μm-mV. The negative differential resistance effect was found in the subthreshold region in the gate current–voltage ( Ig– VGS) curve. The hot carrier transfer mechanism that occurred in the turn-on/pinch-off progress of the CC-HEMT under the dual-directional sweep, proved by the VDS- and Lg-dependent bi-directional transfer I–V characteristics, can be responsible for these excellent device performances. This work is believed to encourage further study of the AlN/GaN platform to power the future group III-nitrides CMOS technology.

中文翻译：

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AlN/GaN/InGaN 耦合沟道 HEMT，具有低于 60 mV/decade 的陡峭亚阈值摆幅

这项工作报告了一种 AlN/GaN/InGaN 高电子迁移率晶体管 (HEMT)，其使用耦合通道架构具有低于 60 mV/dec 的陡峭亚阈值摆幅 (SS)。制造的晶体管显示出可忽略不计的迟滞、39 mV/dec 的 SS、大于 4.2 V 的大栅极电压摆幅，并实现了出色的品质因数 Q = g米/SS 为 6.3 μS-dec/ μm-mV。在栅极电流 - 电压的亚阈值区域发现了负微分电阻效应（ IG– VGS） 曲线。双向扫描下 CC-HEMT 开启/夹断过程中发生的热载流子传输机制，由 V 证明DS- 和我G-依赖双向传输 I-V 特性，可以为这些出色的器件性能负责。这项工作被认为会鼓励进一步研究 AlN/GaN 平台，为未来的 III 族氮化物 CMOS 技术提供动力。