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Strain-dependent phase-change devices based on vanadium dioxide thin films on flexible glass substrates
Applied Physics Letters ( IF 4 ) Pub Date : 2022-04-26 , DOI: 10.1063/5.0088979
Min Kyun Sohn 1 , Hardeep Singh 1 , Eun-Mi Kim 2 , Gi Seok Heo 2 , Seoung Woo Choi 3 , Do Gi Phyun 3 , Dae Joon Kang 1
Affiliation  

Smart materials offering tunable electrical properties in response to external stimuli are in high demand for their usage in reconfigurable electronics. This study reports the stability and reversibility of insulator-to-metal transition (IMT) in a vanadium dioxide (VO2) thin film grown on flexible glass substrates under the external strain. The systematic application of the external strain was used to demonstrate red and blue shifts in the Raman spectra (ω V-O) and the corresponding change in the IMT critical temperature. The effects of externally applied tensile strain on the electrical resistance of the VO2 thin film were discussed concerning the stability and repeatability of the IMT. We demonstrated that the electrical performance of the thin film was nondegradable, although the sample was subjected to multiple cycles of tensile strain. Moreover, these results not only provide essential knowledge for understanding the correlation between the external strain and physical properties of VO2 thin films but also suggest their applicability as strain-dependent phase-change devices.

中文翻译:

基于柔性玻璃基板上二氧化钒薄膜的应变相关相变器件

响应外部刺激而提供可调电性能的智能材料在可重构电子产品中的应用需求量很大。本研究报告了二氧化钒 (VO) 中绝缘体到金属转变 (IMT) 的稳定性和可逆性2个) 在外部应变下在柔性玻璃基板上生长的薄膜。外部应变的系统应用用于证明拉曼光谱中的红移和蓝移 (ωVO) 以及 IMT 临界温度的相应变化。外部施加的拉伸应变对 VO 电阻的影响2个讨论了有关 IMT 的稳定性和可重复性的薄膜。我们证明了薄膜的电气性能是不可降解的,尽管样品经受了多次拉伸应变循环。此外,这些结果不仅为理解 VO 的外部应变与物理特性之间的相关性提供了必要的知识2个薄膜,但也表明它们作为应变相关相变器件的适用性。
更新日期:2022-04-26
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