PbSe is a simple binary compound that has been studied extensively for use as a promising moderate-temperature thermoelectric material. In this Letter, we report the observation of the light-induced transverse thermoelectric (TTE) effect in c-axis inclined PbSe thin films that were grown epitaxially on c-axis miscut SrTiO3 single crystal substrates using the pulsed laser deposition technique. Because of the anisotropic Seebeck coefficient of these inclined PbSe thin films, high TTE voltage signals were detected when the film surfaces were irradiated using various different continuous-wave lasers with wavelengths ranging from the ultraviolet (360 nm) to the far infrared (10.6 μm). In addition, the amplitudes of the output voltage signals showed good linear dependence on both the radiation power density and the film inclination angle. The results above demonstrate the potential of PbSe for self-powered ultra-broadband light detection applications.

中文翻译：

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基于倾斜结构外延PbSe薄膜光致横向热电效应的超宽带光检测

PbSe 是一种简单的二元化合物，已被广泛研究用作有前途的中温热电材料。在这封信中，我们报告了在 c 轴斜切 SrTiO 上外延生长的 c 轴倾斜 PbSe 薄膜中光诱导横向热电 (TTE) 效应的观察结果3个使用脉冲激光沉积技术的单晶衬底。由于这些倾斜的 PbSe 薄膜的各向异性塞贝克系数，当使用波长范围从紫外 (360 nm) 到远红外 (10.6 μm) 的各种不同连续波激光器照射薄膜表面时，检测到高 TTE 电压信号. 此外，输出电压信号的振幅对辐射功率密度和薄膜倾角均表现出良好的线性相关性。上述结果证明了硒化铅在自供电超宽带光检测应用中的潜力。