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A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters
IEEE Journal of Solid-State Circuits ( IF 5.4 ) Pub Date : 2022-02-04 , DOI: 10.1109/jssc.2022.3144362
Yiyu Shen 1 , Robert Bootsman 1 , Morteza S. Alavi 1 , Leo C. N. de Vreede 1
Affiliation  

This article presents a wideband $2 \times 12$ -bit direct-digital RF modulator (DDRM) operating in a 0.5-to-3-GHz band for 5G transmitters. The proposed digital Cartesian modulator features an advanced IQ-mapping technique to boost RF power by 3 dB and suppress the $I/Q$ image. To verify the proposed concept, a 40-nm CMOS prototype is implemented whose RF peak output power at 2 GHz is more than 14 dBm. It achieves an adjacent-channel leakage ratio (ACLR) of −52 dBc and an error vector magnitude (EVM) of −40 dB for a 20-MHz 256-QAM signal at 2.4 GHz. With a 320-MHz 256-QAM signal, the measured ACLR and EVM performances are better than −43 dBc and −32 dB at 2.4 GHz, respectively, without using any digital pre-distortion.

中文翻译:

用于 5G 发射机的宽带 IQ 映射直接数字射频调制器

本文介绍了宽带 $2 \乘以 12$ 位直接数字射频调制器 (DDRM) 在 0.5 至 3 GHz 频段运行,用于 5G 发射机。所提出的数字笛卡尔调制器具有先进的 IQ 映射技术,可将射频功率提高 3 dB 并抑制 $I/Q$图片。为了验证所提出的概念,实现了一个 40-nm CMOS 原型,其在 2 GHz 时的 RF 峰值输出功率超过 14 dBm。对于 2.4 GHz 的 20-MHz 256-QAM 信号,它实现了 -52 dBc 的相邻信道泄漏比 (ACLR) 和 -40 dB 的误差矢量幅度 (EVM)。对于 320-MHz 256-QAM 信号,在不使用任何数字预失真的情况下,测得的 ACLR 和 EVM 性能在 2.4 GHz 时分别优于 -43 dBc 和 -32 dB。
更新日期:2022-02-04
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