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NaNbO3 modified BiScO3-BaTiO3 dielectrics for high-temperature energy storage applications
Journal of Materiomics ( IF 9.4 ) Pub Date : 2022-04-21 , DOI: 10.1016/j.jmat.2022.04.005
Jincymol Joseph 1 , Zhenxiang Cheng 1 , Shujun Zhang 1
Affiliation  

Among the lead-free compositions identified as potential capacitor materials, BiScO3-BaTiO3 (BS-BT) relaxor dielectrics exhibit good energy storage performance. In this research, 0.4BS-0.6BT is considered as the parent composition, with NaNbO3 (NN) addition intended to substitute the A and B site cations. The NN modified BS-BT ceramics exhibit excellent temperature stability in terms of their dielectric properties, with the room-temperature dielectric constant on the order of 500–1 000 and variation less than 10% up to 400 °C. In addition, NN has a high band-gap energy leading to increased breakdown strength and energy storage properties in modified compositions. The highest breakdown strength was achieved for 0.4BS-0.55BT-0.05NN, being on the order of 430 kV/cm, and a high energy density of 4.6 J/cm3 with high energy efficiency of 90% was simultaneously achieved. Of particular importance is that the variation of the energy density was below 5% due to the temperature-insensitive dielectric constant, while ∼90% energy efficiency was retained over the temperature range of 25–160 °C. The improved temperature stability with NN addition makes this composition promising for high temperature capacitor and dielectric energy storage applications.



中文翻译:

用于高温储能应用的 NaNbO3 改性 BiScO3-BaTiO3 电介质

在被确定为潜在电容器材料的无铅组合物中,BiScO 3 -BaTiO 3 (BS-BT)弛豫电介质表现出良好的储能性能。本研究以0.4BS-0.6BT为母体成分,NaNbO 3(NN) 添加旨在替代 A 位和 B 位阳离子。NN改性的BS-BT陶瓷在介电性能方面表现出优异的温度稳定性,室温介电常数约为500-1 000,在400°C时变化小于10%。此外,NN 具有高带隙能量,从而提高了改性组合物的击穿强度和储能性能。0.4BS-0.55BT-0.05NN的击穿强度最高,约为430 kV/cm,能量密度高达4.6 J/cm 3同时实现了 90% 的高能效。特别重要的是,由于对温度不敏感的介电常数,能量密度的变化低于 5%,而在 25-160°C 的温度范围内保持了约 90% 的能量效率。添加 NN 后温度稳定性得到改善,使得这种组合物有望用于高温电容器和介电储能应用。

更新日期:2022-04-21
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