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Improving thermal stability of LiNbO3 based electro-optical electric field sensor by depositing a TiO2 film
High Voltage ( IF 4.4 ) Pub Date : 2022-03-29 , DOI: 10.1049/hve2.12198
She Wang 1 , Hai Wang 1 , Chanxiao Li 1, 2 , Chijie Zhuang 1, 3, 4 , Rong Zeng 1, 3
Affiliation  

Electro-optic electric field sensors based on LiNbO3 are widely used for the measurement of electric fields or transient voltages. However, the working bias of the sensor is influenced by the temperature due to the thermo-optic effect of LiNbO3. An athermal electro-optic electric field sensor was demonstrated by coating a thin layer of TiO2 film which has a negative thermo-optic coefficient, on the common-path interferometer based sensor to compensate LiNbO3's positive thermo-optic coefficient. Both calculation and experimental studies were conducted. The experimental results reasonably agree well with the calculated values, and the results show the sensor coated with a 640 nm thick TiO2 film has a much smaller temperature dependence of 0.011°/°C compared to the initial value of 0.1°/°C.

中文翻译:

通过沉积 TiO2 薄膜提高基于 LiNbO3 的电光电场传感器的热稳定性

基于 LiNbO 3的电光电场传感器广泛用于测量电场或瞬态电压。然而,由于LiNbO 3的热光效应,传感器的工作偏差会受到温度的影响。通过在基于共路干涉仪的传感器上涂覆一层具有负热光系数的TiO 2薄膜来补偿LiNbO 3的正热光系数,展示了一种无热电光电场传感器。进行了计算和实验研究。实验结果与计算值相当吻合,结果表明传感器涂有 640 nm 厚的 TiO 2与 0.1°/°C 的初始值相比,薄膜的温度依赖性要小得多,为 0.011°/°C。
更新日期:2022-03-29
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