ABSTRACT

Taking into consideration of the phase transition of silicon, the threshold prediction model of the melting starting and completion and vaporization starting and completion irradiated by laser with pulse width from 400 fs to 1 ms and 1064 nm wavelength is established based on the results of temperature field. The laser-induced ablation threshold of silicon is measured experimentally. The variation tendency of the associated threshold of silicon with the laser pulse width is analyzed quantitatively by the heating depth model, which can predict the generation of periodic linear and circular ripples on silicon surface.

中文翻译：

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1064 nm波长各种脉宽激光对单晶硅热烧蚀及相变的影响

摘要

考虑硅的相变，根据温度场结果，建立了脉宽400 fs~1 ms、波长1 064 nm激光照射下的熔化起始和完成以及汽化起始和完成的阈值预测模型。通过实验测量硅的激光诱导烧蚀阈值。通过加热深度模型定量分析了硅的相关阈值随激光脉冲宽度的变化趋势，可以预测硅表面周期性线性和圆形波纹的产生。