• The growth of high-quality single-crystalline Te nanobelts is reported by introducing atomically flat hexagonal boron nitride (h-BN) nanoflakes into the chemical vapor deposition system as the growth substrate.

• The field-effect transistor based on Te grown on h-BN exhibits an ultrahigh hole mobility up to 1370 cm² V⁻¹ s⁻¹ at room temperature.

中文翻译：

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在具有超高空穴迁移率的 p 型晶体管的 h-BN 上生长碲纳米带

• 通过将原子级扁平的六方氮化硼 (h-BN) 纳米片引入化学气相沉积系统作为生长基底，报道了高质量单晶 Te 纳米带的生长。

• 基于在 h-BN 上生长的 Te 的场效应晶体管在室温下表现出高达 1370 cm ²  V ^-1  s ^{-1的超高空穴迁移率。}